dor_id: 45807

506.#.#.a: Público

590.#.#.d: Los artículos enviados a la revista "Journal of Applied Research and Technology", se juzgan por medio de un proceso de revisión por pares

510.0.#.a: Scopus, Directory of Open Access Journals (DOAJ); Sistema Regional de Información en Línea para Revistas Científicas de América Latina, el Caribe, España y Portugal (Latindex); Indice de Revistas Latinoamericanas en Ciencias (Periódica); La Red de Revistas Científicas de América Latina y el Caribe, España y Portugal (Redalyc); Consejo Nacional de Ciencia y Tecnología (CONACyT); Google Scholar Citation

561.#.#.u: https://www.icat.unam.mx/

650.#.4.x: Ingenierías

336.#.#.b: article

336.#.#.3: Artículo de Investigación

336.#.#.a: Artículo

351.#.#.6: https://jart.icat.unam.mx/index.php/jart

351.#.#.b: Journal of Applied Research and Technology

351.#.#.a: Artículos

harvesting_group: RevistasUNAM

270.1.#.p: Revistas UNAM. Dirección General de Publicaciones y Fomento Editorial, UNAM en revistas@unam.mx

590.#.#.c: Open Journal Systems (OJS)

270.#.#.d: MX

270.1.#.d: México

590.#.#.b: Concentrador

883.#.#.u: https://revistas.unam.mx/catalogo/

883.#.#.a: Revistas UNAM

590.#.#.a: Coordinación de Difusión Cultural

883.#.#.1: https://www.publicaciones.unam.mx/

883.#.#.q: Dirección General de Publicaciones y Fomento Editorial

850.#.#.a: Universidad Nacional Autónoma de México

856.4.0.u: https://jart.icat.unam.mx/index.php/jart/article/view/109/108

100.1.#.a: You, H.C.

524.#.#.a: You, H.C. (2015). Transistor characteristics of zinc oxide active layers at various zinc acetate dihydrate solution concentrations of zinc oxide thin-film. Journal of Applied Research and Technology; Vol. 13 Núm. 2. Recuperado de https://repositorio.unam.mx/contenidos/45807

245.1.0.a: Transistor characteristics of zinc oxide active layers at various zinc acetate dihydrate solution concentrations of zinc oxide thin-film

502.#.#.c: Universidad Nacional Autónoma de México

561.1.#.a: Instituto de Ciencias Aplicadas y Tecnología, UNAM

264.#.0.c: 2015

264.#.1.c: 2015-04-01

653.#.#.a: ZnO; Zinc acetate dihydrate solution; Thin-film transistor; Concentration

506.1.#.a: La titularidad de los derechos patrimoniales de esta obra pertenece a las instituciones editoras. Su uso se rige por una licencia Creative Commons BY-NC-SA 4.0 Internacional, https://creativecommons.org/licenses/by-nc-sa/4.0/legalcode.es, para un uso diferente consultar al responsable jurídico del repositorio por medio del correo electrónico gabriel.ascanio@icat.unam.mx

884.#.#.k: https://jart.icat.unam.mx/index.php/jart/article/view/109

001.#.#.#: 074.oai:ojs2.localhost:article/109

041.#.7.h: eng

520.3.#.a: This paper presents a technique involving a sol-gel deposition method applied to the deposition of zinc oxide thin film for a transistor as a semiconductor layer. This method was used for manufacturing the essential thin films of II-VI semiconductors. Zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) have been successfully fabricated at low temperatures. We investigated the electrical characteristics of ZnO thin-film transistors at various concentrations of ZnO solution 0.02 M, 0.03 M, 0.04 M, and 0.05 M. All of the ZnO films exhibited a hexagonal wurtzite polycrystalline structure with (002) preferred orientation. Atomic force microscopy (AFM) revealed the formation of grains or clusters as a result of the accumulation of nanoparticles, and the grain size increased with increasing solution concentration. The coated ZnO films were employed as the active channel layer in thin-film transistors, and the impact of the solution concentration on the device performance was examined. As the solution concentration was increased, the field-effect mobility increased from 1 × 10–4 cm2/V-s to 1.2 × 10–1 cm2/V-s, the threshold voltage increased from 4.8 V to 11.1 V, and the Ion/Ioff ratio increased from 104 to 106. The on-off ratio (Ion/off) was found to be 106. The 0.05 M ZnO solution performed optimally. All Rights Reserved © 2015 Universidad Nacional Autónoma de México, Centro de Ciencias Aplicadas y Desarrollo Tecnológico. This is an open access item distributed under the Creative Commons CC License BY-NC-ND 4.0.

773.1.#.t: Journal of Applied Research and Technology; Vol. 13 Núm. 2

773.1.#.o: https://jart.icat.unam.mx/index.php/jart

022.#.#.a: ISSN electrónico: 2448-6736; ISSN: 1665-6423

310.#.#.a: Bimestral

264.#.1.b: Instituto de Ciencias Aplicadas y Tecnología, UNAM

doi: https://doi.org/10.1016/j.jart.2015.06.003

harvesting_date: 2023-11-08 13:10:00.0

856.#.0.q: application/pdf

last_modified: 2024-03-19 14:00:00

license_url: https://creativecommons.org/licenses/by-nc-sa/4.0/legalcode.es

license_type: by-nc-sa

_deleted_conflicts: 2-4824dafba22faf980acbfaa231b0efb9

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