dor_id: 45803

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856.4.0.u: https://jart.icat.unam.mx/index.php/jart/article/view/105/104

100.1.#.a: Rudat, P.S.; Mueller, D.C.; Meerholz, K.

524.#.#.a: Rudat, P.S., et al. (2015). The I-V characteristics of organic hole-only devices based on crosslinked hole-transport layer. Journal of Applied Research and Technology; Vol. 13 Núm. 2. Recuperado de https://repositorio.unam.mx/contenidos/45803

245.1.0.a: The I-V characteristics of organic hole-only devices based on crosslinked hole-transport layer

502.#.#.c: Universidad Nacional Autónoma de México

561.1.#.a: Instituto de Ciencias Aplicadas y Tecnología, UNAM

264.#.0.c: 2015

264.#.1.c: 2015-04-01

653.#.#.a: Hole-Only Device; Crosslinking; Oxetane; Solution process; XTPD; HTL

506.1.#.a: La titularidad de los derechos patrimoniales de esta obra pertenece a las instituciones editoras. Su uso se rige por una licencia Creative Commons BY-NC-SA 4.0 Internacional, https://creativecommons.org/licenses/by-nc-sa/4.0/legalcode.es, para un uso diferente consultar al responsable jurídico del repositorio por medio del correo electrónico gabriel.ascanio@icat.unam.mx

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041.#.7.h: eng

520.3.#.a: Commonly, organic electronics devices are build up from the organic semiconductor thin films which are prepared either by thermal vacuum evaporation or by solution-processing techniques such as spin casting, inkjet printing, or roll-to-roll printing. The solution-processing has several advantages although it has a crucial problem for multilayer device preparation where the first layer will be dissolved by the solvent of the second layer. The using of insoluble layer is a solution of this problem. This paper reports the electrical (I-V) characteristics of Hole-Only Devices (HOD) which are prepared via solution processing by using insoluble layer. The insoluble layer based on triphenylamine dimmer was sandwiched in the two electrodes as anode and cathode. This insoluble layer was prepared via oxetane ring-opening polymerisation either oxidative crosslinking, photo crosslinking, or trityl crosslinking. The measurement was carried out to get current density versus electric-field strength characteristic as a function of oxidation potential, polymerisation mechanism, the amount of oxidant, and curing temperature. The measurement confirmed that the crosslinked hole-transport layers are successfully applied in HOD, the oxidative crosslinking mechanism showed the doping effect, and the amount of oxidant influences the conductivity of crosslinked layer. All Rights Reserved © 2015 Universidad Nacional Autónoma de México, Centro de Ciencias Aplicadas y Desarrollo Tecnológico. This is an open access item distributed under the Creative Commons CC License BY-NC-ND 4.0.

773.1.#.t: Journal of Applied Research and Technology; Vol. 13 Núm. 2

773.1.#.o: https://jart.icat.unam.mx/index.php/jart

022.#.#.a: ISSN electrónico: 2448-6736; ISSN: 1665-6423

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doi: https://doi.org/10.1016/j.jart.2015.06.006

harvesting_date: 2023-11-08 13:10:00.0

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Artículo

The I-V characteristics of organic hole-only devices based on crosslinked hole-transport layer

Rudat, P.S.; Mueller, D.C.; Meerholz, K.

Instituto de Ciencias Aplicadas y Tecnología, UNAM, publicado en Journal of Applied Research and Technology, y cosechado de Revistas UNAM

Licencia de uso

Procedencia del contenido

Cita

Rudat, P.S., et al. (2015). The I-V characteristics of organic hole-only devices based on crosslinked hole-transport layer. Journal of Applied Research and Technology; Vol. 13 Núm. 2. Recuperado de https://repositorio.unam.mx/contenidos/45803

Descripción del recurso

Autor(es)
Rudat, P.S.; Mueller, D.C.; Meerholz, K.
Tipo
Artículo de Investigación
Área del conocimiento
Ingenierías
Título
The I-V characteristics of organic hole-only devices based on crosslinked hole-transport layer
Fecha
2015-04-01
Resumen
Commonly, organic electronics devices are build up from the organic semiconductor thin films which are prepared either by thermal vacuum evaporation or by solution-processing techniques such as spin casting, inkjet printing, or roll-to-roll printing. The solution-processing has several advantages although it has a crucial problem for multilayer device preparation where the first layer will be dissolved by the solvent of the second layer. The using of insoluble layer is a solution of this problem. This paper reports the electrical (I-V) characteristics of Hole-Only Devices (HOD) which are prepared via solution processing by using insoluble layer. The insoluble layer based on triphenylamine dimmer was sandwiched in the two electrodes as anode and cathode. This insoluble layer was prepared via oxetane ring-opening polymerisation either oxidative crosslinking, photo crosslinking, or trityl crosslinking. The measurement was carried out to get current density versus electric-field strength characteristic as a function of oxidation potential, polymerisation mechanism, the amount of oxidant, and curing temperature. The measurement confirmed that the crosslinked hole-transport layers are successfully applied in HOD, the oxidative crosslinking mechanism showed the doping effect, and the amount of oxidant influences the conductivity of crosslinked layer. All Rights Reserved © 2015 Universidad Nacional Autónoma de México, Centro de Ciencias Aplicadas y Desarrollo Tecnológico. This is an open access item distributed under the Creative Commons CC License BY-NC-ND 4.0.
Tema
Hole-Only Device; Crosslinking; Oxetane; Solution process; XTPD; HTL
Idioma
eng
ISSN
ISSN electrónico: 2448-6736; ISSN: 1665-6423

Enlaces