Artículo

Solutions of q-deformed multiple-trapping model (MTM) for charge carrier transport from time-of-flight transient (TOF) photo-current in amorphous semiconductors

Serdouk, F.; Boumali, A.; Makhlouf, A.; Benkhedi, M. L.

Facultad de Ciencias, UNAM, publicado en Revista Mexicana de Física, y cosechado de Revistas UNAM

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Procedencia del contenido

Entidad o dependencia
Facultad de Ciencias, UNAM
Revista
Repositorio
Contacto
Revistas UNAM. Dirección General de Publicaciones y Fomento Editorial, UNAM en revistas@unam.mx

Cita

Serdouk, F., et al. (2020). Solutions of q-deformed multiple-trapping model (MTM) for charge carrier transport from time-of-flight transient (TOF) photo-current in amorphous semiconductors. Revista Mexicana de Física; Vol 66, No 5 Sept-Oct: 643-655. Recuperado de https://repositorio.unam.mx/contenidos/4108188

Descripción del recurso

Autor(es)
Serdouk, F.; Boumali, A.; Makhlouf, A.; Benkhedi, M. L.
Tipo
Artículo de Investigación
Área del conocimiento
Físico Matemáticas y Ciencias de la Tierra
Título
Solutions of q-deformed multiple-trapping model (MTM) for charge carrier transport from time-of-flight transient (TOF) photo-current in amorphous semiconductors
Fecha
2020-09-01
Resumen
This paper is devoted to investigating the description of the q-deformed multiple-trapping equation for charge carrier transport in amorphous semiconductors. For this, we at first modified the multi–trapping model (MTM) of charge carriers in amorphous semiconductors from time-of-flight (TOF) transient photo-current in the framework of the q-derivative formalism, and then, we have constructed, our simulated current by using a method based on the Laplace method. This method is implemented in a program proposed recently by [14] which allows us to construct a current using the Padé approximation expansion.
Idioma
eng
ISSN
2683-2224 (digital); 0035-001X (impresa)

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