dor_id: 4110107

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100.1.#.a: Parveen, Bushra

524.#.#.a: Parveen, Bushra (2017). Room-temperature ferromagnetism in Ni-doped TiO2 diluted magnetic semiconductor thin films. Journal of Applied Research and Technology; Vol. 15 Núm. 2. Recuperado de https://repositorio.unam.mx/contenidos/4110107

245.1.0.a: Room-temperature ferromagnetism in Ni-doped TiO2 diluted magnetic semiconductor thin films

502.#.#.c: Universidad Nacional Autónoma de México

561.1.#.a: Instituto de Ciencias Aplicadas y Tecnología, UNAM

264.#.0.c: 2017

264.#.1.c: 2019-06-06

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041.#.7.h: eng

520.3.#.a: We report undoped and Ni-doped TiO2 (xNi = 0.00, 0.50, 1.00, 1.50, 2.00 and 2.50 wt.%) thin films fabricated on glass substrates by using a combination of solid-state reaction and dip coating techniques. The structural properties are observed by X-ray diffraction (XRD), which have depicted that annealing at 650? results in rutile Ni-doped TiO2 as a major phase along with a minor anatase phase. The surface morphology of the deposited thin films, as measured by scanning electron microscopy (SEM), indicates granular spherical shaped nanostructures. Room-temperature ferromagnetism (RTFM) has been illustrated by all the grown thin films, as elucidated by vibrating sample magnetometer (VSM). Although Ni content has no pronounced effect on the crystallinity that indicates a substitutional replacement of Ni in TiO2 lattice, however, Ni content is observed to influence the ferromagnetic behavior. Therefore, the present study signifies the potential spintronic applications of Ni-doped TiO2 diluted magnetic semiconductors, fabricated by a low-cost method, as it exhibits RTFM with nanograins at the surface.

773.1.#.t: Journal of Applied Research and Technology; Vol. 15 Núm. 2

773.1.#.o: https://jart.icat.unam.mx/index.php/jart

022.#.#.a: ISSN electrónico: 2448-6736; ISSN: 1665-6423

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doi: https://doi.org/10.1016/j.jart.2017.01.009

harvesting_date: 2023-11-08 13:10:00.0

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file_creator: Bushra Parveen

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Artículo

Room-temperature ferromagnetism in Ni-doped TiO2 diluted magnetic semiconductor thin films

Parveen, Bushra

Instituto de Ciencias Aplicadas y Tecnología, UNAM, publicado en Journal of Applied Research and Technology, y cosechado de Revistas UNAM

Licencia de uso

Procedencia del contenido

Cita

Parveen, Bushra (2017). Room-temperature ferromagnetism in Ni-doped TiO2 diluted magnetic semiconductor thin films. Journal of Applied Research and Technology; Vol. 15 Núm. 2. Recuperado de https://repositorio.unam.mx/contenidos/4110107

Descripción del recurso

Autor(es)
Parveen, Bushra
Tipo
Artículo de Investigación
Área del conocimiento
Ingenierías
Título
Room-temperature ferromagnetism in Ni-doped TiO2 diluted magnetic semiconductor thin films
Fecha
2019-06-06
Resumen
We report undoped and Ni-doped TiO2 (xNi = 0.00, 0.50, 1.00, 1.50, 2.00 and 2.50 wt.%) thin films fabricated on glass substrates by using a combination of solid-state reaction and dip coating techniques. The structural properties are observed by X-ray diffraction (XRD), which have depicted that annealing at 650? results in rutile Ni-doped TiO2 as a major phase along with a minor anatase phase. The surface morphology of the deposited thin films, as measured by scanning electron microscopy (SEM), indicates granular spherical shaped nanostructures. Room-temperature ferromagnetism (RTFM) has been illustrated by all the grown thin films, as elucidated by vibrating sample magnetometer (VSM). Although Ni content has no pronounced effect on the crystallinity that indicates a substitutional replacement of Ni in TiO2 lattice, however, Ni content is observed to influence the ferromagnetic behavior. Therefore, the present study signifies the potential spintronic applications of Ni-doped TiO2 diluted magnetic semiconductors, fabricated by a low-cost method, as it exhibits RTFM with nanograins at the surface.
Idioma
eng
ISSN
ISSN electrónico: 2448-6736; ISSN: 1665-6423

Enlaces