dor_id: 4128533

506.#.#.a: Público

590.#.#.d: Cada artículo es evaluado mediante una revisión ciega única. Los revisores son externos nacionales e internacionales.

510.0.#.a: Web of Science (WoS), Directory of Open Access Journals (DOAJ), Sistema Regional de Información en Línea para Revistas Científicas de América Latina, el Caribe, España y Portugal (Latindex), Scientific Electronic Library Online (SciELO), Consejo Nacional de Ciencia y Tecnología (CONACyT), La Red de Revistas Científicas de América Latina y el Caribe, España y Portugal (Redalyc)

561.#.#.u: https://www.fciencias.unam.mx/

650.#.4.x: Físico Matemáticas y Ciencias de la Tierra

336.#.#.b: article

336.#.#.3: Artículo de Investigación

336.#.#.a: Artículo

351.#.#.6: https://rmf.smf.mx/ojs/rmf/index

351.#.#.b: Revista Mexicana de Física

351.#.#.a: Artículos

270.1.#.p: Revistas UNAM. Dirección General de Publicaciones y Fomento Editorial, UNAM en revistas@unam.mx

590.#.#.c: Open Journal Systems (OJS)

270.#.#.d: MX

270.1.#.d: México

590.#.#.b: Concentrador

883.#.#.u: http://www.revistas.unam.mx/front/

883.#.#.a: Revistas UNAM

590.#.#.a: Coordinación de Difusión Cultural, UNAM

883.#.#.1: https://www.publicaciones.unam.mx/

883.#.#.q: Dirección General de Publicaciones y Fomento Editorial, UNAM

850.#.#.a: Universidad Nacional Autónoma de México

856.4.0.u: https://rmf.smf.mx/ojs/index.php/rmf/article/view/5448/5689

100.1.#.a: Daniel, T. O.; Uno, U. E.; Isah, K. U.; Ahmadu, U.

524.#.#.a: Daniel, T. O., et al. (2021). Optimization of electrical conductivity of SnS thin film of 0.2 < t ≤ 0.4 μm thicknes for field effect transistor application. Revista Mexicana de Física; Vol. 67 No. 2, 2021; 263-268. Recuperado de https://repositorio.unam.mx/contenidos/4128533

245.1.0.a: Optimization of electrical conductivity of SnS thin film of 0.2 < t ≤ 0.4 μm thicknes for field effect transistor application

502.#.#.c: Universidad Nacional Autónoma de México

561.1.#.a: Facultad de Ciencias, UNAM

264.#.0.c: 2021

264.#.1.c: 2021-07-15

506.1.#.a: La titularidad de los derechos patrimoniales de esta obra pertenece a las instituciones editoras. Su uso se rige por una licencia Creative Commons BY-NC-ND 4.0 Internacional, https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.es, fecha de asignación de la licencia 2021-07-15, para un uso diferente consultar al responsable jurídico del repositorio por medio del correo electrónico rmf@ciencias.unam.mx

884.#.#.k: https://rmf.smf.mx/ojs/index.php/rmf/article/view/5448

001.#.#.#: rmf.oai:ojs2.rmf.smf.mx:article/5448

041.#.7.h: eng

520.3.#.a: This study is focused on the investigation of SnS thin film for transistor application. Electron trap which is associated with grain boundary effect affects the electrical conductivity of SnS semiconductor thin film thereby militating the attainment of the threshold voltage required for transistor operation. Grain size and grain boundary is a function of a semiconductor’s thickness. SnS semiconductor thin films of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition on glass substrates. Profilometry, Scanning electron microscope, Energy dispersive X-ray spectroscopy and hall measurement were used to characterise the composition, microstructure and electrical properties of the SnS thin film.  SnS thin films were found to consist of Sn and S elements whose composition varied with increase in thickness. The film conductivity was found to vary with grain size and grain boundary which is a function of the film thickness. The SnS film of 0.4 μm thickness shows optimal grain growth with a grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density which allows charge carriers to move freely in the lattice thereby causing a reduction in resistivity and increase in conductivity of the films which is essential in obtaining the threshold voltage for a transistor semiconductor channel layer operation. The carrier concentration of due to low resistivity of 3.612 ×105 Ωcm of 0.4 μm SnS thin film thickness is optimum and favours the attainment of the threshold voltage for a field effect transistor operation hence the application of SnS thin film as a semiconductor channel layer in a field effect transistor.

773.1.#.t: Revista Mexicana de Física; Vol. 67 No. 2 (2021); 263-268

773.1.#.o: https://rmf.smf.mx/ojs/rmf/index

022.#.#.a: ISSN electrónico: 2683-2224; ISSN impreso: 0035-001X

310.#.#.a: Bimestral

300.#.#.a: Páginas: 263-268

264.#.1.b: Facultad de Ciencias, UNAM

758.#.#.1: https://rmf.smf.mx/ojs/rmf/index

doi: https://doi.org/10.31349/RevMexFis.67.263

handle: 00b8fe16892309d4

harvesting_date: 2022-08-17 16:00:00.0

856.#.0.q: application/pdf

file_creation_date: 2021-02-23 16:40:24.0

file_name: 711c1eb5bd0c5f6ba8f9eef1524883e5ee7d188a8d78e7eaf908cd8d9b5a66ee.pdf

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last_modified: 2022-11-29 12:00:00

license_url: https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.es

license_type: by-nc-nd

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