dor_id: 4149480

506.#.#.a: Público

590.#.#.d: Los artículos enviados a la revista "Journal of Applied Research and Technology", se juzgan por medio de un proceso de revisión por pares

510.0.#.a: Scopus, Directory of Open Access Journals (DOAJ); Sistema Regional de Información en Línea para Revistas Científicas de América Latina, el Caribe, España y Portugal (Latindex); Indice de Revistas Latinoamericanas en Ciencias (Periódica); La Red de Revistas Científicas de América Latina y el Caribe, España y Portugal (Redalyc); Consejo Nacional de Ciencia y Tecnología (CONACyT); Google Scholar Citation

561.#.#.u: https://www.icat.unam.mx/

650.#.4.x: Ingenierías

336.#.#.b: article

336.#.#.3: Artículo de Investigación

336.#.#.a: Artículo

351.#.#.6: https://jart.icat.unam.mx/index.php/jart

351.#.#.b: Journal of Applied Research and Technology

351.#.#.a: Artículos

harvesting_group: RevistasUNAM

270.1.#.p: Revistas UNAM. Dirección General de Publicaciones y Fomento Editorial, UNAM en revistas@unam.mx

590.#.#.c: Open Journal Systems (OJS)

270.#.#.d: MX

270.1.#.d: México

590.#.#.b: Concentrador

883.#.#.u: https://revistas.unam.mx/catalogo/

883.#.#.a: Revistas UNAM

590.#.#.a: Coordinación de Difusión Cultural

883.#.#.1: https://www.publicaciones.unam.mx/

883.#.#.q: Dirección General de Publicaciones y Fomento Editorial

850.#.#.a: Universidad Nacional Autónoma de México

856.4.0.u: https://jart.icat.unam.mx/index.php/jart/article/view/1950/1015

100.1.#.a: Hamui, Leon; Sánchez Vergara, María Elena; Ferrer Garcia, Ignacio

524.#.#.a: Hamui, Leon, et al. (2023). Novel Frequency Dependent OFET Attenuator Using ClInPc with Al2O3 Embedded Nanoparticles in Nylon 11 for Flexible Electronics. Journal of Applied Research and Technology; Vol. 21 Núm. 4, 2023; 613-630. Recuperado de https://repositorio.unam.mx/contenidos/4149480

245.1.0.a: Novel Frequency Dependent OFET Attenuator Using ClInPc with Al2O3 Embedded Nanoparticles in Nylon 11 for Flexible Electronics

502.#.#.c: Universidad Nacional Autónoma de México

561.1.#.a: Instituto de Ciencias Aplicadas y Tecnología, UNAM

264.#.0.c: 2023

264.#.1.c: 2023-08-31

653.#.#.a: OFET; Electrical characterization; System model; Flexible electronics

506.1.#.a: La titularidad de los derechos patrimoniales de esta obra pertenece a las instituciones editoras. Su uso se rige por una licencia Creative Commons BY-NC-ND 4.0 Internacional, https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.es, para un uso diferente consultar al responsable jurídico del repositorio por medio del correo electrónico gabriel.ascanio@icat.unam.mx

884.#.#.k: https://jart.icat.unam.mx/index.php/jart/article/view/1950

001.#.#.#: 074.oai:ojs2.localhost:article/1950

041.#.7.h: eng

520.3.#.a: The Organic field-effect transistors (OFETs) have been largely investigated due to their low-cost manufacturing, flexibility, and lightweight, as well as their optical and electrical characteristics. That allow its application in sensors, amplifiers, attenuators signal filtering, and high-frequency response devices, like biosensing, wearable electronics, optoelectronics, telecommunications, and other potential applications. Throughout this investigation, a ClInPc flexible OFET with Al2O3 embedded particles in nylon 11, was manufactured and characterized to evaluate the optoelectronic and morphological properties. For the manufacturing, a high-vacuum thermal evaporation deposition technique was used, and UV-vis spectroscopy analysis and scanning electron microscopy were conducted to evaluate the optoelectronic and morphological properties. Also, a study regarding the electrical characteristics for different time-dependent wavefunction input signals, changing the input voltage and frequency, has been conducted. The latter was driven to determine the time-response characteristics, gains, phase shift and to determine whether the device function as an attenuator or an amplifier with the selected configuration. The device has been modelled to obtain the OFET operation parameters. A resulting capacitance of 567 pF was calculated. Uniform and continuous films where obtained, which guarantees an efficient charge transport. For all signals the output voltage is lower than that of the input voltage. Also, for the higher frequency the output voltage is decreased compared to lower frequencies. Gains decreasing variation of up to 0.05 indicate the operating application as an attenuator. Phase variation of up to 100 °, resulted while varying the input frequency. The model resulted on a gate capacitance value between 500 and 1180 pF, and gate-drain capacitance value between 50 and 500 pF. All of this could give evidence that state of the art ClInPc flexible OFET device with Al2O3 embedded nanoparticles in nylon 11 could be used toward current high-performance frequency-dependent flexible applications.

773.1.#.t: Journal of Applied Research and Technology; Vol. 21 Núm. 4 (2023); 613-630

773.1.#.o: https://jart.icat.unam.mx/index.php/jart

022.#.#.a: ISSN electrónico: 2448-6736; ISSN: 1665-6423

310.#.#.a: Bimestral

300.#.#.a: Páginas: 613-630

264.#.1.b: Instituto de Ciencias Aplicadas y Tecnología, UNAM

doi: https://doi.org/10.22201/icat.24486736e.2023.21.4.1950

harvesting_date: 2023-11-08 13:10:00.0

856.#.0.q: application/pdf

file_creation_date: 2023-08-25 20:03:38.0

file_modification_date: 2023-08-25 20:03:38.0

file_creator: Yolanda G.G.

file_name: 4774e0a77e5b554b3df4c60b695f95f88fcd7fe4429ec1f54d95f22d754dfba0.pdf

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last_modified: 2024-03-19 14:00:00

license_url: https://creativecommons.org/licenses/by-nc-nd/4.0/legalcode.es

license_type: by-nc-nd

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