dor_id: 4110214

506.#.#.a: Público

590.#.#.d: Los artículos enviados a la revista "Journal of Applied Research and Technology", se juzgan por medio de un proceso de revisión por pares

510.0.#.a: Scopus, Directory of Open Access Journals (DOAJ); Sistema Regional de Información en Línea para Revistas Científicas de América Latina, el Caribe, España y Portugal (Latindex); Indice de Revistas Latinoamericanas en Ciencias (Periódica); La Red de Revistas Científicas de América Latina y el Caribe, España y Portugal (Redalyc); Consejo Nacional de Ciencia y Tecnología (CONACyT); Google Scholar Citation

561.#.#.u: https://www.icat.unam.mx/

650.#.4.x: Ingenierías

336.#.#.b: article

336.#.#.3: Artículo de Investigación

336.#.#.a: Artículo

351.#.#.6: https://jart.icat.unam.mx/index.php/jart

351.#.#.b: Journal of Applied Research and Technology

351.#.#.a: Artículos

harvesting_group: RevistasUNAM

270.1.#.p: Revistas UNAM. Dirección General de Publicaciones y Fomento Editorial, UNAM en revistas@unam.mx

590.#.#.c: Open Journal Systems (OJS)

270.#.#.d: MX

270.1.#.d: México

590.#.#.b: Concentrador

883.#.#.u: https://revistas.unam.mx/catalogo/

883.#.#.a: Revistas UNAM

590.#.#.a: Coordinación de Difusión Cultural

883.#.#.1: https://www.publicaciones.unam.mx/

883.#.#.q: Dirección General de Publicaciones y Fomento Editorial

850.#.#.a: Universidad Nacional Autónoma de México

856.4.0.u: https://jart.icat.unam.mx/index.php/jart/article/view/769/732

100.1.#.a: Ghalme, Sachin; Mankar, Ankush; Bhalerao, Yogesh

524.#.#.a: Ghalme, Sachin, et al. (2017). Integrated Taguchi-simulated annealing (SA) approach for analyzing wear behaviour of silicon nitride. Journal of Applied Research and Technology; Vol. 15 Núm. 6. Recuperado de https://repositorio.unam.mx/contenidos/4110214

245.1.0.a: Integrated Taguchi-simulated annealing (SA) approach for analyzing wear behaviour of silicon nitride

502.#.#.c: Universidad Nacional Autónoma de México

561.1.#.a: Instituto de Ciencias Aplicadas y Tecnología, UNAM

264.#.0.c: 2017

264.#.1.c: 2019-07-24

653.#.#.a: Silicon nitride (Si3 N4); Hexagonal boron nitride (hBN); Steel (ASTM 316L); Design of experiments (DoE); Taguchi method; Simulated annealing (SA)

506.1.#.a: La titularidad de los derechos patrimoniales de esta obra pertenece a las instituciones editoras. Su uso se rige por una licencia Creative Commons BY-NC-SA 4.0 Internacional, https://creativecommons.org/licenses/by-nc-sa/4.0/legalcode.es, para un uso diferente consultar al responsable jurídico del repositorio por medio del correo electrónico gabriel.ascanio@icat.unam.mx

884.#.#.k: https://jart.icat.unam.mx/index.php/jart/article/view/769

001.#.#.#: 074.oai:ojs2.localhost:article/769

041.#.7.h: eng

520.3.#.a: In this study, the integrated Taguchi-simulated annealing (SA) approach is applied to examine the wear behaviour of silicon nitride (Si3 N4)-hexagonal boron nitride (hBN). Wear tests for Si3N4 -hBN composite versus steel (ASTM 316L) disc were carried out for a dry sliding conditions in a so-called pin-on-disc arrangement. The tests were realized at % volume of hBN 0, 4, 8, 12, 16 in Si3 N4 under the loads of 5, 10, 15, 20, 25 N. The wear rate (WR) was analyzed using Taguchi –signal to noise ratio approach with the aim of finding optimal combination of load and % volume of hBN in Si3N4 . By applying the analysis of variance, it was also found that the greatest impact on wear rate has interaction of load and % volume of hBN with percentage effect of 51.89%, then % volume of hBN with 35.04% and load with 13.06%. The experimental results are further utelized to develop the second-order, linear mathematical model. Further, this model is processed with simulated annealing (SA) to find the optimal combination of load and % volume of hBN to minimize wear rate. Combined Taguchi-SA approach was successfully used to predict the optimal combination of load and % volume of hBN in Si3 N4 to minimize wear rate of Si3 N4 . The dominant wear mechanism is adhesive wear as confirmed by scanning electron microscopy with energy dispersive spectroscopy (SEM-EDS).

773.1.#.t: Journal of Applied Research and Technology; Vol. 15 Núm. 6

773.1.#.o: https://jart.icat.unam.mx/index.php/jart

022.#.#.a: ISSN electrónico: 2448-6736; ISSN: 1665-6423

310.#.#.a: Bimestral

264.#.1.b: Instituto de Ciencias Aplicadas y Tecnología, UNAM

doi: https://doi.org/10.1016/j.jart.2017.08.003

harvesting_date: 2023-11-08 13:10:00.0

856.#.0.q: application/pdf

file_creation_date: 2018-01-10 16:41:38.0

file_modification_date: 2018-01-10 11:19:40.0

file_creator: Sachin Ghalme

file_name: 2c50a7791306b38999f93bb527115df408ec374bd8688d41f94b664e9af17640.pdf

file_pages_number: 9

file_format_version: application/pdf; version=1.7

file_size: 1830338

last_modified: 2024-03-19 14:00:00

license_url: https://creativecommons.org/licenses/by-nc-sa/4.0/legalcode.es

license_type: by-nc-sa

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