dor_id: 45794

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856.4.0.u: https://jart.icat.unam.mx/index.php/jart/article/view/96/95

100.1.#.a: Chao Nan, Chen; Jung Jie, Huang

524.#.#.a: Chao Nan, Chen, et al. (2015). Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication. Journal of Applied Research and Technology; Vol. 13 Núm. 2. Recuperado de https://repositorio.unam.mx/contenidos/45794

245.1.0.a: Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication

502.#.#.c: Universidad Nacional Autónoma de México

561.1.#.a: Instituto de Ciencias Aplicadas y Tecnología, UNAM

264.#.0.c: 2015

264.#.1.c: 2015-04-01

653.#.#.a: Solution process; Indium-zinc-oxide; Thin-film transistor; Excimer laser annealing

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001.#.#.#: 074.oai:ojs2.localhost:article/96

041.#.7.h: eng

520.3.#.a: A Solution Based Indium-Zinc-Oxide thin-film transistor (TFT) with a field-effect mobility of 0.58 cm2/Vs, a threshold voltage of 2.84 V by using pulse laser annealing processes. Indium-zinc-oxide (IZO) films with a low process temperature were deposited by sol-gel solution based method and KrF excimer laser annealing (wavelength of 248 nm). Solution based indium-zinc-oxide (IZO) films usually needs high temperature about 500°C post annealing in a oven. KrF excimer laser annealing shows advantages of low temperature process, the less process time deceases to only few seconds was used to replace the high temperature process. IZO thin films suffering laser irradiation still keeps the amorphous film quality by transmission electron microscopy (TEM) diffraction pattern analysis. It could be expected this technology to large-area flexible display, in the future. All Rights Reserved © 2015 Universidad Nacional Autónoma de México, Centro de Ciencias Aplicadas y Desarrollo Tecnológico. This is an open access item distributed under the Creative Commons CC License BY-NC-ND 4.0.

773.1.#.t: Journal of Applied Research and Technology; Vol. 13 Núm. 2

773.1.#.o: https://jart.icat.unam.mx/index.php/jart

022.#.#.a: ISSN electrónico: 2448-6736; ISSN: 1665-6423

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doi: https://doi.org/10.1016/j.jart.2015.06.012

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Artículo

Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication

Chao Nan, Chen; Jung Jie, Huang

Instituto de Ciencias Aplicadas y Tecnología, UNAM, publicado en Journal of Applied Research and Technology, y cosechado de Revistas UNAM

Licencia de uso

Procedencia del contenido

Cita

Chao Nan, Chen, et al. (2015). Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication. Journal of Applied Research and Technology; Vol. 13 Núm. 2. Recuperado de https://repositorio.unam.mx/contenidos/45794

Descripción del recurso

Autor(es)
Chao Nan, Chen; Jung Jie, Huang
Tipo
Artículo de Investigación
Área del conocimiento
Ingenierías
Título
Effects of excimer laser annealing on low-temperature solution based indium-zinc-oxide thin film transistor fabrication
Fecha
2015-04-01
Resumen
A Solution Based Indium-Zinc-Oxide thin-film transistor (TFT) with a field-effect mobility of 0.58 cm2/Vs, a threshold voltage of 2.84 V by using pulse laser annealing processes. Indium-zinc-oxide (IZO) films with a low process temperature were deposited by sol-gel solution based method and KrF excimer laser annealing (wavelength of 248 nm). Solution based indium-zinc-oxide (IZO) films usually needs high temperature about 500°C post annealing in a oven. KrF excimer laser annealing shows advantages of low temperature process, the less process time deceases to only few seconds was used to replace the high temperature process. IZO thin films suffering laser irradiation still keeps the amorphous film quality by transmission electron microscopy (TEM) diffraction pattern analysis. It could be expected this technology to large-area flexible display, in the future. All Rights Reserved © 2015 Universidad Nacional Autónoma de México, Centro de Ciencias Aplicadas y Desarrollo Tecnológico. This is an open access item distributed under the Creative Commons CC License BY-NC-ND 4.0.
Tema
Solution process; Indium-zinc-oxide; Thin-film transistor; Excimer laser annealing
Idioma
eng
ISSN
ISSN electrónico: 2448-6736; ISSN: 1665-6423

Enlaces