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Ver términos de la licenciaBaquero , R., et al. (2003). Electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states. Revista Mexicana de Física; Vol 49, No 001. Recuperado de https://repositorio.unam.mx/contenidos/41015
Autor(es)
Baquero , R.; Olguín , D.
Tipo
Artículo de Investigación
Área del conocimiento
Físico Matemáticas y Ciencias de la Tierra
Título
Electronic band structure of (001)–semiconductor surfaces: the frontier–inducedsemi–infinite–medium states
Fecha
2003-01-01
Resumen
In previous work we have discussed the valence band electronic structure of the (001) oriented semi–infinite medium of the II–VI wide band gap zinc–blende semiconductor compounds. We have found three characteristic surface resonances besides the known bulk bands (heavy hole, light hole and spin–orbit bands). Two of these resonances correspond to the anion–terminated surface and the third one to the cation terminated surface. Furthermore, we have shown that three non dispersive (001)–surface–induced bulk states, in the Γ − K direction of the 2D Brillouin zone, are also characteristic of these systems. To identify these states, from other known surface states, we have called them frontier–induced semi–infinite–medium states. In order to continue with the description of these systems, we review the main characteristics of the electronic structure of the (001)–surfaces and we present a detailed theoretical discussion of the frontier–induced semi–infinite–medium states. We use tight binding Hamiltonians and the well–known Surface Green’s Function Matching method to calculate the electronic surface band structure.
Tema
Electronic states; surface resonances tight; binding method
Idioma
eng
ISSN
2683-2224 (digital); 0035-001X (impresa)
